Si-nanowire based gate-all-around nonvolatile SONOS memory cell

Si-nanowire based gate-all-around nonvolatile SONOS memory cell

10.1109/LED.2008.920267

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Bibliographic Details
Main Authors:	Fu, J., Singh, N., Buddharaju, K.D., Teo, S.H.G., Shen, C., Jiang, Y., Zhu, C.X., Yu, M.B., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Gnani, E., Baccarani, G.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Gate-all-around (GAA) Nanowire (NW) Nonvolatile memory (NVM) Silicon-oxide-nitride-oxide-silicon (SONOS)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83028
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Institution:	National University of Singapore

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