Si-nanowire based gate-all-around nonvolatile SONOS memory cell

• Main Authors: Fu, J., Singh, N., Buddharaju, K.D., Teo, S.H.G., Shen, C., Jiang, Y., Zhu, C.X., Yu, M.B., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Gnani, E., Baccarani, G.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Gate-all-around (GAA); Nanowire (NW); Nonvolatile memory (NVM); Silicon-oxide-nitride-oxide-silicon (SONOS)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83028
• Institution: National University of Singapore

10.1109/LED.2008.920267