Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors

Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors

10.1143/JJAP.46.2058

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Bibliographic Details
Main Authors: Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Condensed
Embedded
FinFET
SiGe
Source/drain
Strained
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83108
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Institution: National University of Singapore
Description
Summary:10.1143/JJAP.46.2058

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