Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
10.1143/JJAP.46.2058
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Main Authors: | Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83108 |
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Institution: | National University of Singapore |
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