Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors

10.1143/JJAP.46.2058

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Bibliographic Details
Main Authors:	Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Condensed Embedded FinFET SiGe Source/drain Strained
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83108
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83108
record_format	dspace
spelling	sg-nus-scholar.10635-831082024-11-12T22:37:50Z Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yoo, W.-J. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Condensed Embedded FinFET SiGe Source/drain Strained 10.1143/JJAP.46.2058 Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 4 B 2058-2061 JAPND 2014-10-07T04:37:22Z 2014-10-07T04:37:22Z 2007-04-24 Article Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C. (2007-04-24). Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (4 B) : 2058-2061. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.46.2058 00214922 http://scholarbank.nus.edu.sg/handle/10635/83108 000247050200048 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Condensed Embedded FinFET SiGe Source/drain Strained
spellingShingle	Condensed Embedded FinFET SiGe Source/drain Strained Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yoo, W.-J. Yeo, Y.-C. Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
description	10.1143/JJAP.46.2058
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yoo, W.-J. Yeo, Y.-C.
format	Article
author	Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yoo, W.-J. Yeo, Y.-C.
author_sort	Tan, K.-M.
title	Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
title_short	Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
title_full	Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
title_fullStr	Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
title_full_unstemmed	Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
title_sort	sub-30nm strained p-channel fin-type field-effect transistors with condensed sige source/drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83108
_version_	1821189399478534144

Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors

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