Tensile-strained germanium CMOS integration on silicon

• Main Authors: Zang, H., Loh, W.Y., Ye, J.D., Lo, G.Q., Cho, B.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CMOS; CMOS integrated circuits; Germanium (Ge); HfO2; High-κ; MOSFET; Tensile strength
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83155
• Institution: National University of Singapore

10.1109/LED.2007.909836