The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

10.1109/TED.2009.2030873

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Bibliographic Details
Main Authors: Lee, R.T.P., Koh, A.T.-Y., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dysprosium
FinFET
Nickel silicide
Schottky barrier
Silicon:carbon
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83178
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2009.2030873

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