The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

10.1109/TED.2009.2030873

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Main Authors: Lee, R.T.P., Koh, A.T.-Y., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dysprosium
FinFET
Nickel silicide
Schottky barrier
Silicon:carbon
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83178
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-831782023-10-29T20:27:59Z The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors Lee, R.T.P. Koh, A.T.-Y. Tan, K.-M. Liow, T.-Y. Chi, D.Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Dysprosium FinFET Nickel silicide Schottky barrier Silicon:carbon 10.1109/TED.2009.2030873 IEEE Transactions on Electron Devices 56 11 2770-2777 IETDA 2014-10-07T04:38:12Z 2014-10-07T04:38:12Z 2009 Article Lee, R.T.P., Koh, A.T.-Y., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors. IEEE Transactions on Electron Devices 56 (11) : 2770-2777. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030873 00189383 http://scholarbank.nus.edu.sg/handle/10635/83178 000271019500051 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Dysprosium
FinFET
Nickel silicide
Schottky barrier
Silicon:carbon
spellingShingle Dysprosium
FinFET
Nickel silicide
Schottky barrier
Silicon:carbon
Lee, R.T.P.
Koh, A.T.-Y.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C.
The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
description 10.1109/TED.2009.2030873
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lee, R.T.P.
Koh, A.T.-Y.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C.
format Article
author Lee, R.T.P.
Koh, A.T.-Y.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C.
author_sort Lee, R.T.P.
title The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
title_short The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
title_full The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
title_fullStr The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
title_full_unstemmed The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
title_sort role of carbon and dysprosium in ni[dy]si:c contacts for schottky-barrier height reduction and application in n-channel mosfets with si:c source/drain stressors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83178
_version_ 1781784321345978368

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