The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes

The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes

10.1109/TED.2007.901348

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Bibliographic Details
Main Authors: Yu, X., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Charge trapping
HfAlON
High-κ
Metal gate
MOSFET
Nitrogen
Poly-Si gate
Vthinstability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83179
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2007.901348

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