The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes

10.1109/TED.2007.901348

Saved in:

Bibliographic Details
Main Authors:	Yu, X., Yu, M., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Charge trapping HfAlON High-κ Metal gate MOSFET Nitrogen Poly-Si gate Vthinstability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83179
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-83179
record_format	dspace
spelling	sg-nus-scholar.10635-831792024-11-10T18:36:18Z The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes Yu, X. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING Charge trapping HfAlON High-κ Metal gate MOSFET Nitrogen Poly-Si gate Vthinstability 10.1109/TED.2007.901348 IEEE Transactions on Electron Devices 54 8 1972-1977 IETDA 2014-10-07T04:38:13Z 2014-10-07T04:38:13Z 2007-08 Article Yu, X., Yu, M., Zhu, C. (2007-08). The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes. IEEE Transactions on Electron Devices 54 (8) : 1972-1977. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.901348 00189383 http://scholarbank.nus.edu.sg/handle/10635/83179 000248390600020 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Charge trapping HfAlON High-κ Metal gate MOSFET Nitrogen Poly-Si gate Vthinstability
spellingShingle	Charge trapping HfAlON High-κ Metal gate MOSFET Nitrogen Poly-Si gate Vthinstability Yu, X. Yu, M. Zhu, C. The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
description	10.1109/TED.2007.901348
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, X. Yu, M. Zhu, C.
format	Article
author	Yu, X. Yu, M. Zhu, C.
author_sort	Yu, X.
title	The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
title_short	The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
title_full	The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
title_fullStr	The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
title_full_unstemmed	The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
title_sort	role of nitrogen on charge-trapping-induced vth instability in hfalon high-κ gate dielectric with metal and poly-si gate electrodes
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83179
_version_	1821193515465441280

The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes

Similar Items