The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
10.1109/TED.2007.901348
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Main Authors: | Yu, X., Yu, M., Zhu, C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83179 |
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Institution: | National University of Singapore |
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