Theoretical analysis and experimental characterization of the dummy-gated VDMOSFET

Theoretical analysis and experimental characterization of the dummy-gated VDMOSFET

10.1109/16.944212

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Bibliographic Details
Main Authors: Xu, S., Ren, C., Liang, Y.C., Foo, P.-D., Sin, J.K.O.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dummy gate
HV VDMOS
RF VDMOS
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83181
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Institution: National University of Singapore
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Summary:10.1109/16.944212

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