Theoretical analysis and experimental characterization of the dummy-gated VDMOSFET
10.1109/16.944212
Saved in:
Main Authors: | Xu, S., Ren, C., Liang, Y.C., Foo, P.-D., Sin, J.K.O. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83181 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Poly Flanked VDMOS (PFVDMOS): A superior technology for superjunction devices
by: Gan, K.P., et al.
Published: (2014) -
Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices
by: Liang, Y.C., et al.
Published: (2014) -
Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance
by: Xu, S., et al.
Published: (2014) -
Experimental characterization of the effect of metal dummy fills on spiral inductors
by: Nan, L., et al.
Published: (2014) -
The KPSS test with seasonal dummies
by: JIN, Sainan, et al.
Published: (2002)