Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

10.1109/TED.2004.825110

Saved in:
Bibliographic Details
Main Authors: Yu, H.Y., Li, M.-F., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
CMOS devices
HfN
Metal gate electrode
Mid-gap work function
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83196
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/TED.2004.825110

Similar Items