Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications
10.1109/TED.2004.825110
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sg-nus-scholar.10635-831962023-10-29T20:30:26Z Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications Yu, H.Y. Li, M.-F. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING CMOS devices HfN Metal gate electrode Mid-gap work function 10.1109/TED.2004.825110 IEEE Transactions on Electron Devices 51 4 609-615 IETDA 2014-10-07T04:38:25Z 2014-10-07T04:38:25Z 2004-04 Article Yu, H.Y., Li, M.-F., Kwong, D.-L. (2004-04). Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications. IEEE Transactions on Electron Devices 51 (4) : 609-615. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.825110 00189383 http://scholarbank.nus.edu.sg/handle/10635/83196 000220458000014 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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| topic |
CMOS devices HfN Metal gate electrode Mid-gap work function |
| spellingShingle |
CMOS devices HfN Metal gate electrode Mid-gap work function Yu, H.Y. Li, M.-F. Kwong, D.-L. Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications |
| description |
10.1109/TED.2004.825110 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Yu, H.Y. Li, M.-F. Kwong, D.-L. |
| format |
Article |
| author |
Yu, H.Y. Li, M.-F. Kwong, D.-L. |
| author_sort |
Yu, H.Y. |
| title |
Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications |
| title_short |
Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications |
| title_full |
Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications |
| title_fullStr |
Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications |
| title_full_unstemmed |
Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications |
| title_sort |
thermally robust hfn metal as a promising gate electrode for advanced mos device applications |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83196 |
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1781784325256118272 |