Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

• Main Authors: Wang, X.P., Yu, H.Y., Li, M.-F., Zhu, C.X., Biesemans, S., Chin, A., Sun, Y.Y., Feng, Y.P., Lim, A., Yeo, Y.-C., Loh, W.Y., Lo, G.Q., Kwong, D.-L.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: CMOS; Fermi-level pinning; HfLaO; High-k (HK) dielectric; Interfacial dipole; Metal gate (MG); Work function
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83267
• Institution: National University of Singapore

10.1109/LED.2007.891757