Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

10.1109/LED.2007.891757

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Bibliographic Details
Main Authors:	Wang, X.P., Yu, H.Y., Li, M.-F., Zhu, C.X., Biesemans, S., Chin, A., Sun, Y.Y., Feng, Y.P., Lim, A., Yeo, Y.-C., Loh, W.Y., Lo, G.Q., Kwong, D.-L.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	CMOS Fermi-level pinning HfLaO High-k (HK) dielectric Interfacial dipole Metal gate (MG) Work function
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83267
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83267
record_format	dspace
spelling	sg-nus-scholar.10635-832672023-10-29T20:28:49Z Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics Wang, X.P. Yu, H.Y. Li, M.-F. Zhu, C.X. Biesemans, S. Chin, A. Sun, Y.Y. Feng, Y.P. Lim, A. Yeo, Y.-C. Loh, W.Y. Lo, G.Q. Kwong, D.-L. PHYSICS ELECTRICAL & COMPUTER ENGINEERING CMOS Fermi-level pinning HfLaO High-k (HK) dielectric Interfacial dipole Metal gate (MG) Work function 10.1109/LED.2007.891757 IEEE Electron Device Letters 28 4 258-260 EDLED 2014-10-07T04:39:16Z 2014-10-07T04:39:16Z 2007-04 Article Wang, X.P., Yu, H.Y., Li, M.-F., Zhu, C.X., Biesemans, S., Chin, A., Sun, Y.Y., Feng, Y.P., Lim, A., Yeo, Y.-C., Loh, W.Y., Lo, G.Q., Kwong, D.-L. (2007-04). Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics. IEEE Electron Device Letters 28 (4) : 258-260. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.891757 07413106 http://scholarbank.nus.edu.sg/handle/10635/83267 000245225300001 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CMOS Fermi-level pinning HfLaO High-k (HK) dielectric Interfacial dipole Metal gate (MG) Work function
spellingShingle	CMOS Fermi-level pinning HfLaO High-k (HK) dielectric Interfacial dipole Metal gate (MG) Work function Wang, X.P. Yu, H.Y. Li, M.-F. Zhu, C.X. Biesemans, S. Chin, A. Sun, Y.Y. Feng, Y.P. Lim, A. Yeo, Y.-C. Loh, W.Y. Lo, G.Q. Kwong, D.-L. Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
description	10.1109/LED.2007.891757
author2	PHYSICS
author_facet	PHYSICS Wang, X.P. Yu, H.Y. Li, M.-F. Zhu, C.X. Biesemans, S. Chin, A. Sun, Y.Y. Feng, Y.P. Lim, A. Yeo, Y.-C. Loh, W.Y. Lo, G.Q. Kwong, D.-L.
format	Article
author	Wang, X.P. Yu, H.Y. Li, M.-F. Zhu, C.X. Biesemans, S. Chin, A. Sun, Y.Y. Feng, Y.P. Lim, A. Yeo, Y.-C. Loh, W.Y. Lo, G.Q. Kwong, D.-L.
author_sort	Wang, X.P.
title	Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
title_short	Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
title_full	Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
title_fullStr	Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
title_full_unstemmed	Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
title_sort	wide vfband vth tunability for metal-gated mos devices with hflao gate dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83267
_version_	1781784346198278144

Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

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