3D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOS

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Yu, D.S., Chin, A., Laio, C.C., Lee, C.F., Cheng, C.F., Chen, W.J., Zhu, C., Li, M.-F., Yoo, W.J., McAlister, S.P., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83297
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Institution: National University of Singapore