3D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOS

• Main Authors: Yu, D.S., Chin, A., Laio, C.C., Lee, C.F., Cheng, C.F., Chen, W.J., Zhu, C., Li, M.-F., Yoo, W.J., McAlister, S.P., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83297
• Institution: National University of Singapore

Technical Digest - International Electron Devices Meeting, IEDM