A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance

A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance

10.1109/ESSDERC.2007.4430936

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83343
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83343

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