A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance

10.1109/ESSDERC.2007.4430936

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83343
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83343
record_format	dspace
spelling	sg-nus-scholar.10635-833432023-10-29T21:02:02Z A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDERC.2007.4430936 ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 295-298 2014-10-07T04:40:09Z 2014-10-07T04:40:09Z 2008 Conference Paper Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2008). A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 295-298. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430936 1424411238 http://scholarbank.nus.edu.sg/handle/10635/83343 000252831900064 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/ESSDERC.2007.4430936
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C.
spellingShingle	Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Sylvester, D. Heng, C.-H. Samudra, G. Yeo, Y.-C. A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance
author_sort	Toh, E.-H.
title	A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance
title_short	A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance
title_full	A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance
title_fullStr	A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance
title_full_unstemmed	A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance
title_sort	complementary-i-mos technology featuring sige channel and i-region for enhancement of impact-ionization, breakdown voltage, and performance
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83343
_version_	1781784354032189440

A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance

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