A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance

• Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83343
• Institution: National University of Singapore

10.1109/ESSDERC.2007.4430936