A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performance

A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performance

2005 International Semiconductor Device Research Symposium

Saved in:
Bibliographic Details
Main Authors: Wang, X.P., Li, M.F., Chin, A., Zhu, C., Chi, R., Yu, X.F., Shen, C., Du, A.Y., Chan, D.S.H., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83380
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:2005 International Semiconductor Device Research Symposium

Similar Items