A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performance
2005 International Semiconductor Device Research Symposium
Saved in:
Main Authors: | Wang, X.P., Li, M.F., Chin, A., Zhu, C., Chi, R., Yu, X.F., Shen, C., Du, A.Y., Chan, D.S.H., Kwong, D.-L. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83380 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
by: Wang, X.P., et al.
Published: (2014) -
Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
by: Wang, X.P., et al.
Published: (2014) -
A novel high-k gate dielectric HfLaO for next generation CMOS technology
by: Li, M.-F., et al.
Published: (2014) -
Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric
by: Wang, X.P., et al.
Published: (2014) -
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
by: Wang, X.P., et al.
Published: (2014)