Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices

10.1109/ECCE-Asia.2013.6579124

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Bibliographic Details
Main Authors: Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
AlGaN/GaN HEMT
high temperature effects
wide bandgap devices
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83488
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Institution: National University of Singapore
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Summary:10.1109/ECCE-Asia.2013.6579124

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