Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices

• Main Authors: Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: AlGaN/GaN HEMT; high temperature effects; wide bandgap devices
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83488
• Institution: National University of Singapore

10.1109/ECCE-Asia.2013.6579124