Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices

10.1109/ECCE-Asia.2013.6579124

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Bibliographic Details
Main Authors:	Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	AlGaN/GaN HEMT high temperature effects wide bandgap devices
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83488
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83488
record_format	dspace
spelling	sg-nus-scholar.10635-834882015-01-07T13:19:21Z Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q. ELECTRICAL & COMPUTER ENGINEERING AlGaN/GaN HEMT high temperature effects wide bandgap devices 10.1109/ECCE-Asia.2013.6579124 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013 379-384 2014-10-07T04:41:48Z 2014-10-07T04:41:48Z 2013 Conference Paper Wang, Y.-H.,Liang, Y.C.,Samudra, G.S.,Chang, T.-F.,Huang, C.-F.,Yuan, L.,Lo, G.-Q. (2013). Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices. 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013 : 379-384. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ECCE-Asia.2013.6579124" target="_blank">https://doi.org/10.1109/ECCE-Asia.2013.6579124</a> 9781479904822 http://scholarbank.nus.edu.sg/handle/10635/83488 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	AlGaN/GaN HEMT high temperature effects wide bandgap devices
spellingShingle	AlGaN/GaN HEMT high temperature effects wide bandgap devices Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q. Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
description	10.1109/ECCE-Asia.2013.6579124
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q.
format	Conference or Workshop Item
author	Wang, Y.-H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. Yuan, L. Lo, G.-Q.
author_sort	Wang, Y.-H.
title	Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
title_short	Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
title_full	Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
title_fullStr	Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
title_full_unstemmed	Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
title_sort	analytical modelling of high temperature characteristics on the dc responses for schottky-gate algan/gan hemt devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83488
_version_	1681089445188599808

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices

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