Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectric

Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectric

10.1149/1.2986766

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Bibliographic Details
Main Authors: Xie, R., Wu, N., Shen, C., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83500
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Institution: National University of Singapore
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Summary:10.1149/1.2986766

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