Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers

Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers

10.1109/ESSDERC.2007.4430916

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Bibliographic Details
Main Authors: Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83508
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Institution: National University of Singapore
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Summary:10.1109/ESSDERC.2007.4430916

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