Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers

10.1109/ESSDERC.2007.4430916

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Bibliographic Details
Main Authors:	Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83508
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83508
record_format	dspace
spelling	sg-nus-scholar.10635-835082023-10-29T21:03:33Z Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.-H. Lai, D.M.Y. Samudra, G. Kwong, D.-L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDERC.2007.4430916 ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference 210-213 2014-10-07T04:42:01Z 2014-10-07T04:42:01Z 2008 Conference Paper Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C. (2008). Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 210-213. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430916 1424411238 http://scholarbank.nus.edu.sg/handle/10635/83508 000252831900044 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/ESSDERC.2007.4430916
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.-H. Lai, D.M.Y. Samudra, G. Kwong, D.-L. Yeo, Y.-C.
format	Conference or Workshop Item
author	Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.-H. Lai, D.M.Y. Samudra, G. Kwong, D.-L. Yeo, Y.-C.
spellingShingle	Lim, A.E.-J. Lee, R.T.P. Wang, X.P. Hwang, W.S. Tung, C.-H. Lai, D.M.Y. Samudra, G. Kwong, D.-L. Yeo, Y.-C. Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers
author_sort	Lim, A.E.-J.
title	Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers
title_short	Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers
title_full	Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers
title_fullStr	Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers
title_full_unstemmed	Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers
title_sort	band edge nmos work function for nickel fully-silicided (fusi) gate obtained by the insertion of novel y-, tb-, and yb-based interlayers
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83508
_version_	1781784362435477504

Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers

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