Comparative study of trap levels observed in undoped and Si-doped GaN

Comparative study of trap levels observed in undoped and Si-doped GaN

Materials Research Society Symposium - Proceedings

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Bibliographic Details
Main Authors: Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83563
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Institution: National University of Singapore
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Summary:Materials Research Society Symposium - Proceedings

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