Comparative study of trap levels observed in undoped and Si-doped GaN

Comparative study of trap levels observed in undoped and Si-doped GaN

Materials Research Society Symposium - Proceedings

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Bibliographic Details
Main Authors:	Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83563
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Institution:	National University of Singapore

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