Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

IEEE International Reliability Physics Symposium Proceedings

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Main Authors:	Samanta, P., Man, T.Y., Chan, A.C.K., Zhang, Q., Zhu, C., Chan, M.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83635
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-836352024-11-10T18:36:48Z Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M. ELECTRICAL & COMPUTER ENGINEERING IEEE International Reliability Physics Symposium Proceedings 594-595 2014-10-07T04:43:27Z 2014-10-07T04:43:27Z 2005 Conference Paper Samanta, P.,Man, T.Y.,Chan, A.C.K.,Zhang, Q.,Zhu, C.,Chan, M. (2005). Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides. IEEE International Reliability Physics Symposium Proceedings : 594-595. ScholarBank@NUS Repository. 0780388038 15417026 http://scholarbank.nus.edu.sg/handle/10635/83635 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	IEEE International Reliability Physics Symposium Proceedings
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M.
format	Conference or Workshop Item
author	Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M.
spellingShingle	Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M. Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
author_sort	Samanta, P.
title	Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
title_short	Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
title_full	Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
title_fullStr	Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
title_full_unstemmed	Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
title_sort	direct tunneling stress-induced leakage current in nmos devices with ultrathin gate oxides
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83635
_version_	1821220703493423104

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

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