Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

• Main Authors: Samanta, P., Man, T.Y., Chan, A.C.K., Zhang, Q., Zhu, C., Chan, M.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83635
• Institution: National University of Singapore

IEEE International Reliability Physics Symposium Proceedings