Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

• Main Authors: Samanta, P., Man, T.Y., Chan, A.C.K., Zhang, Q., Zhu, C., Chan, M.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83635

IEEE International Reliability Physics Symposium Proceedings