Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate

10.1109/ICSICT.2006.306123

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Bibliographic Details
Main Authors:	Yu, X., Yu, M., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83675
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Institution:	National University of Singapore

Description
Summary:	10.1109/ICSICT.2006.306123

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