Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate

Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate

10.1109/ICSICT.2006.306123

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Main Authors: Yu, X., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83675
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Institution: National University of Singapore
id sg-nus-scholar.10635-83675
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spelling sg-nus-scholar.10635-836752015-01-29T04:41:55Z Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate Yu, X. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ICSICT.2006.306123 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 149-151 2014-10-07T04:43:54Z 2014-10-07T04:43:54Z 2007 Conference Paper Yu, X.,Yu, M.,Zhu, C. (2007). Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 149-151. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICSICT.2006.306123" target="_blank">https://doi.org/10.1109/ICSICT.2006.306123</a> 1424401615 http://scholarbank.nus.edu.sg/handle/10635/83675 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/ICSICT.2006.306123
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yu, X.
Yu, M.
Zhu, C.
format Conference or Workshop Item
author Yu, X.
Yu, M.
Zhu, C.
spellingShingle Yu, X.
Yu, M.
Zhu, C.
Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate
author_sort Yu, X.
title Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate
title_short Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate
title_full Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate
title_fullStr Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate
title_full_unstemmed Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate
title_sort effective suppression of fermi level pinning in poly-si/hfo2 gate stack by using poly-sige gate
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83675
_version_ 1681089479557775360

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