Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
10.1016/S0167-9317(03)00050-9
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2014
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sg-nus-scholar.10635-836842024-11-14T10:20:52Z Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K. ELECTRICAL & COMPUTER ENGINEERING Charge storage Ge nanocrystals Rapid thermal annealing 10.1016/S0167-9317(03)00050-9 Microelectronic Engineering 66 1-4 218-223 MIENE 2014-10-07T04:44:00Z 2014-10-07T04:44:00Z 2003-04 Conference Paper Heng, C.L., Teo, L.W., Ho, V., Tay, M.S., Lei, Y., Choi, W.K., Chim, W.K. (2003-04). Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure. Microelectronic Engineering 66 (1-4) : 218-223. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(03)00050-9 01679317 http://scholarbank.nus.edu.sg/handle/10635/83684 000182725500035 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| topic |
Charge storage Ge nanocrystals Rapid thermal annealing |
| spellingShingle |
Charge storage Ge nanocrystals Rapid thermal annealing Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K. Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure |
| description |
10.1016/S0167-9317(03)00050-9 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K. |
| format |
Conference or Workshop Item |
| author |
Heng, C.L. Teo, L.W. Ho, V. Tay, M.S. Lei, Y. Choi, W.K. Chim, W.K. |
| author_sort |
Heng, C.L. |
| title |
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure |
| title_short |
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure |
| title_full |
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure |
| title_fullStr |
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure |
| title_full_unstemmed |
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure |
| title_sort |
effects of rapid thermal annealing time and ambient temperature on the charge storage capability of sio2/pure ge/rapid thermal oxide memory structure |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83684 |
| _version_ |
1821231613016539136 |