Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

10.1109/.2005.1469225

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Bibliographic Details
Main Authors: Yang, T., Li, M.F., Shen, C., Ang, C.H., Zhu, C., Yeo, Y.C., Samudra, G., Rustagi, S.C., Yu, M.B., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83730
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Institution: National University of Singapore
Description
Summary:10.1109/.2005.1469225

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