Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

• Main Authors: Yang, T., Li, M.F., Shen, C., Ang, C.H., Zhu, C., Yeo, Y.C., Samudra, G., Rustagi, S.C., Yu, M.B., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83730
• Institution: National University of Singapore

10.1109/.2005.1469225