Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

10.1109/IEDM.2006.346948

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Bibliographic Details
Main Authors: Wang, Y.Q., Gao, D.Y., Hwang, W.S., Shen, C., Zhang, G., Samudra, G., Yeo, Y.-C., Yoo, W.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83731
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2006.346948

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