Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

10.1109/IEDM.2006.346948

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Main Authors:	Wang, Y.Q., Gao, D.Y., Hwang, W.S., Shen, C., Zhang, G., Samudra, G., Yeo, Y.-C., Yoo, W.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83731
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83731
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spelling	sg-nus-scholar.10635-837312015-01-08T13:56:11Z Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack Wang, Y.Q. Gao, D.Y. Hwang, W.S. Shen, C. Zhang, G. Samudra, G. Yeo, Y.-C. Yoo, W.J. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2006.346948 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:44:32Z 2014-10-07T04:44:32Z 2006 Conference Paper Wang, Y.Q.,Gao, D.Y.,Hwang, W.S.,Shen, C.,Zhang, G.,Samudra, G.,Yeo, Y.-C.,Yoo, W.J. (2006). Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346948" target="_blank">https://doi.org/10.1109/IEDM.2006.346948</a> 1424404398 01631918 http://scholarbank.nus.edu.sg/handle/10635/83731 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2006.346948
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, Y.Q. Gao, D.Y. Hwang, W.S. Shen, C. Zhang, G. Samudra, G. Yeo, Y.-C. Yoo, W.J.
format	Conference or Workshop Item
author	Wang, Y.Q. Gao, D.Y. Hwang, W.S. Shen, C. Zhang, G. Samudra, G. Yeo, Y.-C. Yoo, W.J.
spellingShingle	Wang, Y.Q. Gao, D.Y. Hwang, W.S. Shen, C. Zhang, G. Samudra, G. Yeo, Y.-C. Yoo, W.J. Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack
author_sort	Wang, Y.Q.
title	Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack
title_short	Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack
title_full	Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack
title_fullStr	Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack
title_full_unstemmed	Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack
title_sort	fast erasing and highly reliable monos type memory with hfo2 high-k trapping layer and si3n4/sio2 tunneling stack
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83731
_version_	1681089489940774912

Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

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