Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

• Main Authors: Wang, Y.Q., Gao, D.Y., Hwang, W.S., Shen, C., Zhang, G., Samudra, G., Yeo, Y.-C., Yoo, W.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83731
• Institution: National University of Singapore

10.1109/IEDM.2006.346948