High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

10.1109/.2005.1469210

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Bibliographic Details
Main Authors:	Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83776
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83776
record_format	dspace
spelling	sg-nus-scholar.10635-837762015-01-09T07:17:00Z High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications Kim, S.-J. Cho, B.J. Yu, M.B. Li, M.-F. Xiong, Y.-Z. Zhu, C. Chin, A. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/.2005.1469210 Digest of Technical Papers - Symposium on VLSI Technology 2005 56-57 DTPTE 2014-10-07T04:45:03Z 2014-10-07T04:45:03Z 2005 Conference Paper Kim, S.-J.,Cho, B.J.,Yu, M.B.,Li, M.-F.,Xiong, Y.-Z.,Zhu, C.,Chin, A.,Kwong, D.-L. (2005). High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 56-57. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/.2005.1469210" target="_blank">https://doi.org/10.1109/.2005.1469210</a> 07431562 http://scholarbank.nus.edu.sg/handle/10635/83776 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/.2005.1469210
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kim, S.-J. Cho, B.J. Yu, M.B. Li, M.-F. Xiong, Y.-Z. Zhu, C. Chin, A. Kwong, D.-L.
format	Conference or Workshop Item
author	Kim, S.-J. Cho, B.J. Yu, M.B. Li, M.-F. Xiong, Y.-Z. Zhu, C. Chin, A. Kwong, D.-L.
spellingShingle	Kim, S.-J. Cho, B.J. Yu, M.B. Li, M.-F. Xiong, Y.-Z. Zhu, C. Chin, A. Kwong, D.-L. High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
author_sort	Kim, S.-J.
title	High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
title_short	High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
title_full	High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
title_fullStr	High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
title_full_unstemmed	High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
title_sort	high capacitance density (> 17 ff/μm2) nb 2o5-based mim capacitors for future rf ic applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83776
_version_	1681089498159513600

High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

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