High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

• Main Authors: Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83776
• Institution: National University of Singapore

10.1109/.2005.1469210