High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

10.1109/.2005.1469210

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Bibliographic Details
Main Authors: Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83776
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83776

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