High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
10.1109/.2005.1469210
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Main Authors: | Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83776 |
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Institution: | National University of Singapore |
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