High mobility high-k/Ge pMOSFETs with 1 nm EOT-new concept on interface engineering and interface characterization

High mobility high-k/Ge pMOSFETs with 1 nm EOT-new concept on interface engineering and interface characterization

10.1109/IEDM.2008.4796703

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Bibliographic Details
Main Authors: Xie, R., Phung, T.H., He, W., Sun, Z., Yu, M., Cheng, Z., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83781
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83781

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