High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

Technical Digest - International Electron Devices Meeting

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Bibliographic Details
Main Authors: Hu, H., Ding, S.-J., Lim, H.F., Zhu, C., Li, M.F., Kim, S.J., Yu, X.F., Chen, J.H., Yong, Y.F., Cho, B.J., Chan, D.S.H., Rustagi, S.C., Yu, M.B., Tung, C.H., Du, A., My, D., Foo, P.D., Chin, A., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83782
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Institution: National University of Singapore
Description
Summary:Technical Digest - International Electron Devices Meeting