Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs

10.1002/pssc.200983452

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Bibliographic Details
Main Authors:	Tian, F., Chor, E.F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	AlGaN/GaN Field effect transistors MIS heterostructures
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83815
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83815
record_format	dspace
spelling	sg-nus-scholar.10635-838152023-10-26T09:11:35Z Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs Tian, F. Chor, E.F. ELECTRICAL & COMPUTER ENGINEERING AlGaN/GaN Field effect transistors MIS heterostructures 10.1002/pssc.200983452 Physica Status Solidi (C) Current Topics in Solid State Physics 7 7-8 1941-1943 2014-10-07T04:45:30Z 2014-10-07T04:45:30Z 2010 Conference Paper Tian, F., Chor, E.F. (2010). Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs. Physica Status Solidi (C) Current Topics in Solid State Physics 7 (7-8) : 1941-1943. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200983452 18626351 http://scholarbank.nus.edu.sg/handle/10635/83815 000301587600061 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	AlGaN/GaN Field effect transistors MIS heterostructures
spellingShingle	AlGaN/GaN Field effect transistors MIS heterostructures Tian, F. Chor, E.F. Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
description	10.1002/pssc.200983452
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tian, F. Chor, E.F.
format	Conference or Workshop Item
author	Tian, F. Chor, E.F.
author_sort	Tian, F.
title	Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
title_short	Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
title_full	Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
title_fullStr	Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
title_full_unstemmed	Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
title_sort	impact of al2o3 incorporation on device performance of hfo2 gate dielectric algan/gan mis-hfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83815
_version_	1781784393455501312

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs

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